Forming method of semiconductor device

半导体器件的形成方法

Abstract

一种半导体器件的形成方法,包括:提供具有隔离结构的半导体衬底;在所述相邻隔离结构间的半导体衬底表面形成栅极结构;在所述栅极结构两侧的半导体衬底内形成凹槽,且位于隔离结构附近区域的凹槽暴露出隔离结构的部分侧壁;采用外延工艺形成填充所述凹槽的应力层,且所述应力层形成后,凹槽靠近隔离结构侧壁区域具有空隙;形成填充满所述空隙的填充层。本发明提供的半导体器件的形成方法,增加了作用于半导体器件沟道区的应力,提高了半导体器件的载流子迁移率,从而改善半导体器件的电学性能。
The invention discloses a forming method of a semiconductor device. The forming method comprises the following steps: providing a semiconductor substrate with isolation structures; forming gate structures on the surface of the semiconductor substrate between adjacent isolation structures; forming grooves in the semiconductor substrate on the two sides of the gate structures; exposing parts of side walls of the isolation structures by the grooves in regions close to the isolation structures; forming stress layers for filling the grooves by using an epitaxial process, wherein the regions, close to the side walls of the isolation structures, of the grooves have gaps after the stress layers are formed; forming filling layers for filling the gaps. According to the forming method of the semiconductor device, the stress acting on a channel region of the semiconductor device is increased, and the carrier mobility of the semiconductor device is improved, so that the electrical performance of the semiconductor device is improved.

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