Trench forming method and semiconductor device manufacturing method

沟槽形成方法和半导体器件制造方法

Abstract

The invention discloses a trench forming method and a semiconductor device manufacturing method. The method disclosed by one embodiment comprises the steps of forming a hard mask layer on a substrate; forming an etching stop confirming layer on the hard mask layer; respectively patterning the etching stop confirming layer and the hard mask layer so as to form patterns, which correspond to trenches to be formed, in the etching stop confirming layer and the hard mask layer; etching the substrate by the etching stop confirming layer and the hard mask layer which are patterned so as to form the trenches in the substrate, wherein by etching of the substrate, the etching stop confirming layer is also etched; and detecting a signal when etching of the etching stop confirming layer is finished so as to confirm the stop of etching of the substrate.
本申请公开了一种沟槽形成方法以及一种半导体器件制造方法。一示例方法可以包括:在衬底上形成硬掩膜层;在硬掩膜层上形成刻蚀停止确定层;分别对刻蚀停止确定层和硬掩膜层进行构图,以在其中形成与要形成的沟槽相对应的图案;以构图的刻蚀停止确定层和硬掩膜层为掩模,对衬底进行刻蚀,以在其中形成沟槽,其中,对衬底的刻蚀同时对刻蚀停止确定层进行刻蚀;以及检测指示刻蚀停止确定层被刻蚀到终点的信号,以确定对衬底刻蚀的停止。

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