Trench forming method and semiconductor device manufacturing method



The invention discloses a trench forming method and a semiconductor device manufacturing method. The method disclosed by one embodiment comprises the steps of forming a hard mask layer on a substrate; forming an etching stop confirming layer on the hard mask layer; respectively patterning the etching stop confirming layer and the hard mask layer so as to form patterns, which correspond to trenches to be formed, in the etching stop confirming layer and the hard mask layer; etching the substrate by the etching stop confirming layer and the hard mask layer which are patterned so as to form the trenches in the substrate, wherein by etching of the substrate, the etching stop confirming layer is also etched; and detecting a signal when etching of the etching stop confirming layer is finished so as to confirm the stop of etching of the substrate.




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