固体摄像装置及固体摄像装置的制造方法

Solid state imaging device and manufacturing method thereof

Abstract

本发明涉及固体摄像装置及固体摄像装置的制造方法,固体摄像装置具备:具备第一面和与所述第一面对置的第二面的半导体基板;设置在所述半导体基板的所述第一面侧的电路;设置在所述半导体基板中、用于对来自所述第二面侧的光进行光电变换的像素;以及所述半导体基板的所述第二面侧的元件。
The invention relates to a solid state imaging device and a manufacturing method thereof. The solid state imaging device includes a semiconductor substrate comprising a first surface and a second surface opposite the first surface; a circuit at a side of the first surface of the semiconductor substrate; a pixel in the semiconductor substrate and converting light from a side of the second surface into electric charge; and an element at a side of the second surface of the semiconductor substrate.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (5)

    Publication numberPublication dateAssigneeTitle
    CN-101290944-AOctober 22, 2008夏普株式会社固态图像捕获装置及其制造方法和电子信息装置
    CN-101840886-ASeptember 22, 2010索尼公司半导体装置的制造方法
    US-2012242876-A1September 27, 2012Kenichiro HagiwaraSolid-state image sensing device, camera module, and solid-state image sensing device manufacturing method
    US-4831431-AMay 16, 1989Honeywell Inc.Capacitance stabilization
    US-5210438-AMay 11, 1993Fujitsu LimitedSemiconductor resistance element and process for fabricating same

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle